Analysis of an ESD failure mechanism on a SiC MESFET
نویسندگان
چکیده
منابع مشابه
Failure analysis of ESD-stressed SiC MESFET
a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Bar...
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2014
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2014.07.134